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R6012JNXC7G 185-1298

ROHM SEMICONDUCTORR6012JNXC7GTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 12AMaximum Gate Threshold Voltage 7V
Mã nhà sản xuất
R6012JNXC7G
Thương hiệu
ROHM SEMICONDUCTOR
Mã kho
185-1232
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

R6012JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications. Fast reverse recovery time (trr) Low on-resistance Fast switching speed Drive circuits can be simple Pb-free plating , RoHS compliant

R6012JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.

Fast reverse recovery time (trr)

Low on-resistance

Fast switching speed

Drive circuits can be simple

Pb-free plating , RoHS compliant

THÔNG SỐ KỸ THUẬT
Manufacturer ROHM
Manufacturer Part No. R6012JNXC7G
Channel Type N
Maximum Continuous Drain Current 12A
Maximum Drain Source Voltage 600V
Package Type TO-220FM
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 390mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 7V
Minimum Gate Threshold Voltage 5V
Maximum Power Dissipation 60W
Transistor Configuration Single
Maximum Gate Source Voltage ±30V
Typical Gate Charge @ Vgs 28 nC @ 15 V
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Width 5mm
Length 10.3mm
Height 16.27mm
Minimum Operating Temperature -55°C

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