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R6024ENJTL 172-0479

ROHM SEMICONDUCTORR6024ENJTLTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.5VMaximum Continuous Drain Current 24A
Mã nhà sản xuất
R6024ENJTL
Thương hiệu
ROHM SEMICONDUCTOR
Mã kho
172-0366
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. Low on-resistance. Fast switching speed. Gate-source voltage (VGSS) guaranteed to be ±20V. Drive circuits can be simple. Parallel use is easy. Pb-free lead plating

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.

Fast switching speed.

Gate-source voltage (VGSS) guaranteed to be ±20V.

Drive circuits can be simple.

Parallel use is easy.

Pb-free lead plating

THÔNG SỐ KỸ THUẬT
Manufacturer ROHM
Manufacturer Part No. R6024ENJTL
Channel Type N
Maximum Continuous Drain Current 24A
Maximum Drain Source Voltage 600V
Package Type D2PAK (TO-263)
Series R6024ENJ
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 320mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 245W
Transistor Configuration Single
Maximum Gate Source Voltage ±30V
Maximum Operating Temperature +150°C
Width 9.2mm
Typical Gate Charge @ Vgs 70 nC @ 10 V
Number of Elements per Chip 1
Length 10.4mm
Height 4.7mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.5V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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