ROHM SEMICONDUCTORRGT30TM65DGC9Transistor: IGBT

Case TO220NFMCollector current 8ACollector-emitter voltage 650VFeatures of semiconductor devices integrated anti-parallel diode

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RGT30TM65DGC9

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RGT30TM65DGC9

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Transistor: IGBT; 650V; 8A; 16W; TO220NFM

THÔNG SỐ KỸ THUẬT
Manufacturer	ROHM SEMICONDUCTOR
Manufacturer Part No.	RGT30TM65DGC9
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	8A
Power dissipation	16W
Case	TO220NFM
Gate-emitter voltage	±30V
Pulsed collector current	45A
Mounting	THT
Gate charge	32nC
Kind of package	tube
Turn-on time	40ns
Turn-off time	204ns
Features of semiconductor devices	integrated anti-parallel diode
Gross weight	1.5 g

Tài liệu: Documentation EN · Product family

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