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ROHM SEMICONDUCTORRQ6E045BNTCRTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 4.5A
Mã nhà sản xuất
RQ6E045BNTCR
Thương hiệu
Mã kho
150-1460
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Low on -resistance Built-in G-S Protection Diode Small Surface Mount Package(TSMT6) Pb-free lead plating, RoHS compliant

Low on -resistance

Built-in G-S Protection Diode

Small Surface Mount Package(TSMT6)

Pb-free lead plating, RoHS compliant

THÔNG SỐ KỸ THUẬT
Manufacturer ROHM
Manufacturer Part No. RQ6E045BNTCR
Channel Type N
Maximum Continuous Drain Current 4.5A
Maximum Drain Source Voltage 30V
Package Type TSMT
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 49mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1.25W
Maximum Gate Source Voltage ±20V
Typical Gate Charge @ Vgs 8.4 nC @ 10 V
Length 3mm
Width 1.8mm
Number of Elements per Chip 2
Maximum Operating Temperature +150°C
Height 0.95mm
Forward Diode Voltage 1.2V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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