US6K4TR Dual N-Channel MOSFET, 1.5 A, 20 V US6K4, 6-Pin TUMT ROHM [US6K4TR]; 133-2950
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.5 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | TUMT |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 310 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 0.3V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Dual Base |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Number of Elements per Chip | 2 |
| Height | 0.77mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 1.8 nC @ 4.5 V |
| Width | 1.7mm |
| Maximum Operating Temperature | +150 °C |
| Series | US6K4 |
| Length | 2mm |
| Forward Diode Voltage | 1.2V |