US6M1TR Dual N/P-Channel MOSFET, ±1 (PChannel) A, ±1.4 (NChannel) A, 20 (PChannel) V, 30 (NChannel) V US6M1, 6-Pin TUMT [US6M1TR]; 183-5564
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | ±1 (PChannel) A, ±1.4 (NChannel) A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | TUMT |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 800 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.7V |
| Maximum Power Dissipation | 1 W |
| Maximum Gate Source Voltage | -12 (P-Channel) V, +20 (N-Channel) V |
| Number of Elements per Chip | 2 |
| Width | 1.7mm |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | 150 °C |
| Series | US6M1 |
| Height | 0.75mm |
| Typical Gate Charge @ Vgs | 2.1 nC @ 4.5 V |
| Length | 2mm |