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STARPOWER SEMICONDUCTORGD300HFY120C2SModule: IGBT

Case C2 62mmCollector current 300AElectrical mounting FASTON connectorsGate-emitter voltage ±20V
Mã nhà sản xuất
GD300HFY120C2S
Mã kho
GD300HFY120C2S
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Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A

THÔNG SỐ KỸ THUẬT
Manufacturer STARPOWER SEMICONDUCTOR
Manufacturer Part No. GD300HFY120C2S
Type of semiconductor module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge
Max. off-state voltage 1.2kV
Collector current 300A
Case C2 62mm
Electrical mounting FASTON connectors, screw
Gate-emitter voltage ±20V
Pulsed collector current 600A
Technology Advanced Trench FS IGBT
Mechanical mounting screw
Gross weight 300 g

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