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STARPOWER SEMICONDUCTORGD30PJX65F1SModule: IGBT

Case F1.1Collector current 30AElectrical mounting Press-in PCBGate-emitter voltage ±20V
Mã nhà sản xuất
GD30PJX65F1S
Mã kho
GD30PJX65F1S
Liên hệ
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Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 30A

THÔNG SỐ KỸ THUẬT
Manufacturer STARPOWER SEMICONDUCTOR
Manufacturer Part No. GD30PJX65F1S
Type of semiconductor module IGBT
Semiconductor structure diode/transistor
Topology boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage 650V
Collector current 30A
Case F1.1
Electrical mounting Press-in PCB
Gate-emitter voltage ±20V
Pulsed collector current 60A
Technology Trench FS IGBT
Mechanical mounting screw
Gross weight 26 g

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