STARPOWER SEMICONDUCTORGD35PJY120F5SModule: IGBT

Case F5.1Collector current 35AElectrical mounting Press-in PCBGate-emitter voltage ±20V

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GD35PJY120F5S

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GD35PJY120F5S

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Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1

THÔNG SỐ KỸ THUẬT
Manufacturer	STARPOWER SEMICONDUCTOR
Manufacturer Part No.	GD35PJY120F5S
Type of semiconductor module	IGBT
Semiconductor structure	diode/transistor
Topology	boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage	1.2kV
Collector current	35A
Case	F5.1
Electrical mounting	Press-in PCB
Gate-emitter voltage	±20V
Pulsed collector current	70A
Technology	Advanced Trench FS IGBT
Mechanical mounting	screw
Gross weight	42 g

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