STARPOWER SEMICONDUCTORGD50PJX65L3SModule: IGBT

Case L3.0Collector current 50AElectrical mounting Press-in PCBGate-emitter voltage ±20V

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GD50PJX65L3S

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GD50PJX65L3S

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Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A

THÔNG SỐ KỸ THUẬT
Manufacturer	STARPOWER SEMICONDUCTOR
Manufacturer Part No.	GD50PJX65L3S
Type of semiconductor module	IGBT
Semiconductor structure	diode/transistor
Topology	boost chopper, IGBT three-phase bridge OE output, NTC thermistor, three-phase diode bridge
Max. off-state voltage	650V
Collector current	50A
Case	L3.0
Electrical mounting	Press-in PCB
Gate-emitter voltage	±20V
Pulsed collector current	100A
Technology	Trench FS IGBT
Mechanical mounting	screw
Gross weight	39 g

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