STMICROELECTRONICSBD139-10Bipolar (BJT) Single Transistor NPN 80 V 1.5 A 1.25 W SOT-32 Through Hole
Collector Emitter Voltage Max 80VContinuous Collector Current 1.5ADC Current Gain hFE Min 40hFEPower Dissipation 1.25W
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Stmicroelectronics BD139-10. Bipolar (BJT) Single Transistor NPN 80 V 1.5 A 1.25 W SOT-32 Through Hole
Features:
- Bipolar (BJT) Single Transistor
- NPN
- 80 V
- 1.5 A
- 1.25 W
- SOT-32
- Through Hole