STMICROELECTRONICSSCT025W120G3-4AGSCT SiC N-Channel MOSFET, 56 A, 1200 V, 4-Pin HiP247-4 SCT025W120G3-4AG
Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 56AKiểu lắp Through Hole
Liên hệ
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST's advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency