STMICROELECTRONICSSCT070W120G3AGSCT0 Silicon MOSFET, 30 A, 1200 V, 3-Pin HiP247 SCT070W120G3AG
Maximum Continuous Drain Current 30AKiểu lắp Through HoleNumber of Elements per Chip 1Pin Count 3
Liên hệ
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST's advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability TJ equal to 200 °C