STMICROELECTRONICSSCTH60N120G2-7Transistor: N-MOSFET

Case H2PAK7Drain current 60ADrain-source voltage 1.2kVFeatures of semiconductor devices Kelvin terminal

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SCTH60N120G2-7

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Mã kho

SCTH60N120G2-7

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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 177A; 390W

THÔNG SỐ KỸ THUẬT
Manufacturer	STMicroelectronics
Manufacturer Part No.	SCTH60N120G2-7
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	60A
Pulsed drain current	177A
Power dissipation	390W
Case	H2PAK7
Gate-source voltage	-10...22V
On-state resistance	52mΩ
Mounting	SMD
Gate charge	94nC
Kind of package	reel, tape
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal
Gross weight	1 g

Tài liệu: Documentation EN · Product family

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