STMICROELECTRONICSSCTWA35N65G2VSiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTWA35N65G2V
Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 45AMaximum Gate Threshold Voltage 3.2V
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The STMicroelectronics silicon carbide Power MOSFET has been developed using ST's advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of both on-resistance and switching losses is almost independent of junction temperature.
Low capacitance
Very fast and robust intrinsic body diode
Very tight variation of on-resistance vs. temperature