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STMicroelectronics 265-1035

STMICROELECTRONICSSGT120R65ALTransistor: N-JFET

Channel Mode EnhancementMaximum Continuous Drain Current 15AKiểu lắp Surface MountNumber of Elements per Chip 2
Mã nhà sản xuất
SGT120R65AL
Thương hiệu
STMICROELECTRONICS
Mã kho
265-1035
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The STMicroelectronics e-mode PowerGaN transistor is combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances. Enhancement mode normally off transistor Very high switching speed High power management capability Extremely low capacitances Kelvin source pad for optimum gate driving Zero reverse recovery charge

The STMicroelectronics e-mode PowerGaN transistor is combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

THÔNG SỐ KỸ THUẬT
Manufacturer STMicroelectronics
Manufacturer Part No. SGT120R65AL
Maximum Continuous Drain Current 15A
Maximum Drain Source Voltage 750V
Package Type Reel
Mounting Type Surface Mount, Through Hole
Pin Count 4
Channel Mode Enhancement
Number of Elements per Chip 2
Transistor Material GaN

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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