STMICROELECTRONICSSTHU47N60DM6AGSTHU47 N-Channel MOSFET, 36 A, 600 V, 7-Pin HU3PAK STHU47N60DM6AG
Channel Type NMaximum Continuous Drain Current 36AMaximum Gate Threshold Voltage 4.75VKiểu lắp Surface Mount
Liên hệ
The STMicroelectronics high-voltage N-channel power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
AEC-Q101 qualified
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested