STMICROELECTRONICSSTHU65N050DM9AGSTHU65 N-Channel MOSFET, 51 A, 650 V, 7-Pin HU3PAK STHU65N050DM9AG
Channel Type NMaximum Continuous Drain Current 51AKiểu lắp Surface MountNumber of Elements per Chip 1
Liên hệ
The STMicroelectronics N-Channel Power MOSFET is built on cutting-edge super-junction MDmesh DM9 technology, ideal for medium to high voltage applications. It offers ultra-low RDS(on) per area and integrates a fast-recovery diode. The advanced silicon-based DM9 process features a multi-drain structure, enhancing overall device performance. With very low recovery charge (Qrr), short recovery time (trr), and minimal RDS(on), this fast-switching MOSFET is perfectly suited for high-efficiency bridge topologies and ZVS phase-shift converters.
Low gate charge and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Excellent switching performance thanks to the extra driving source pin
AEC-Q101 qualified