STMICROELECTRONICSSTO60N045DM9STO60 Silicon N-Channel MOSFET, 55 A, 600 V, 8-Pin TO-LL package STO60N045DM9
Channel Type NMaximum Continuous Drain Current 55AKiểu lắp Surface MountNumber of Elements per Chip 1
Liên hệ
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast recovery body diode
Very low FOM
Low input capacitance and resistance
100 percent avalanche tested
Extremely high dv by dt ruggedness