STMICROELECTRONICSSTPSC30G065WLYSchottky Rectifier & Schottky Diode, STPSC30G065WLY

The STMicroelectronics SiC Diode is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.

No reverse recovery charge in application current range

Switching behaviour independent of temperature

High forward surge capability