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STMICROELECTRONICSSTWA60N043DM9Dual Silicon N-Channel MOSFET, 56 A, 56 A, 3-Pin TO-247 STWA60N043DM9

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 56AKiểu lắp Through Hole
Mã nhà sản xuất
STWA60N043DM9
Thương hiệu
Quy cách đóng gói
Ống 30 cái
Mã kho
2751383
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com 📄 Datasheet (PDF)

The STMicroelectronics N-channel power MOSFET is based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure.

Fast recovery body diode

Worldwide best RDS per area among silicon based fast recovery devices

Low gate charge, input capacitance and resistance

100 percent avalanche tested

THÔNG SỐ KỸ THUẬT
Manufacturer STMicroelectronics
Manufacturer Part No. STWA60N043DM9
Channel Type N
Maximum Continuous Drain Current 56A
Maximum Drain Source Voltage 56A
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Channel Mode Enhancement
Transistor Material Silicon
Number of Elements per Chip 2

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📄 Datasheet STMICROELECTRONICS STWA60N043DM9 (PDF)