STMICROELECTRONICSSTWA60N043DM9Dual Silicon N-Channel MOSFET, 56 A, 56 A, 3-Pin TO-247 STWA60N043DM9
The STMicroelectronics N-channel power MOSFET is based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure.
Fast recovery body diode
Worldwide best RDS per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested















