STMICROELECTRONICSSTWA68N65DM6AGDual N-Channel MOSFET, 72 A, 650 V, 3-Pin TO247-3 STMicroelectronics STWA68N65DM6AG
Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 72AMaximum Gate Threshold Voltage 4.75V
Liên hệ
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
629