STMICROELECTRONICSTN1605H-6GThyristor
Designed with high immunity switching to external surges, this device offers robust switching up to its 150°C maximum Tj. The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit. High junction temperature: Tj = 150 °C Gate triggering current IGT = 6 mA High noise immunity dV/dt = 200 V/μs up to 150 °C Blocking voltage VDRM/VRRM = 600 V High turn-on current rise dI/dt: 100 A/μs
Designed with high immunity switching to external surges, this device offers robust switching up to its 150°C maximum Tj. The combination of noise immunity and low gate triggering current allows to design strong and compact control circuit.
High junction temperature: Tj = 150 °C
Gate triggering current IGT = 6 mA
High noise immunity dV/dt = 200 V/μs up to 150 °C
Blocking voltage VDRM/VRRM = 600 V
High turn-on current rise dI/dt: 100 A/μs