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IRF9510PBF 543-0018

VISHAYIRF9510PBFTransistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 4AMaximum Power Dissipation 43W
Mã nhà sản xuất
IRF9510PBF
Thương hiệu
VISHAY
Mã kho
543-0018
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Dynamic dV/dt rating Repetitive avalanche rated Simple drive requirements MOSFET Transistors, Vishay Semiconductor

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating

Repetitive avalanche rated

Simple drive requirements

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. IRF9510PBF
Channel Type P
Maximum Continuous Drain Current 4A
Maximum Drain Source Voltage 100V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 1.2Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 43W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +175°C
Transistor Material Si
Width 4.7mm
Length 10.41mm
Typical Gate Charge @ Vgs 8.7 nC @ 10 V
Number of Elements per Chip 1
Minimum Operating Temperature -55°C
Height 9.01mm

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