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VISHAYIRFB9N60APBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 9.2AMaximum Power Dissipation 170W
Mã nhà sản xuất
IRFB9N60APBF
Thương hiệu
Mã kho
541-1922
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. IRFB9N60APBF
Channel Type N
Maximum Continuous Drain Current 9.2A
Maximum Drain Source Voltage 600V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 750mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 170W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Width 4.7mm
Number of Elements per Chip 1
Length 10.41mm
Maximum Operating Temperature +150°C
Transistor Material Si
Typical Gate Charge @ Vgs 49 nC @ 10 V
Height 9.01mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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