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VISHAYIRFIB6N60APBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 5.5AMaximum Power Dissipation 60W
Mã nhà sản xuất
IRFIB6N60APBF
Thương hiệu
Mã kho
541-1950
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. IRFIB6N60APBF
Channel Type N
Maximum Continuous Drain Current 5.5A
Maximum Drain Source Voltage 600V
Package Type TO-220FP
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 750mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 60W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Transistor Material Si
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 49 nC @ 10 V
Minimum Operating Temperature -55°C
Height 9.8mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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