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IRFIB7N50APBF 541-1966

VISHAYIRFIB7N50APBFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 6.6AMaximum Power Dissipation 60W
Mã nhà sản xuất
IRFIB7N50APBF
Thương hiệu
VISHAY
Mã kho
541-1966
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel MOSFET, 500V, Vishay Semiconductor The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness. Operating junction and storage temperature range - 55 to + 150°C MOSFET Transistors, Vishay Semiconductor

N-Channel MOSFET, 500V, Vishay Semiconductor

The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.

Operating junction and storage temperature range - 55 to + 150°C

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. IRFIB7N50APBF
Channel Type N
Maximum Continuous Drain Current 6.6A
Maximum Drain Source Voltage 500V
Package Type TO-220FP
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 520mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 60W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Transistor Material Si
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 52 nC @ 10 V
Maximum Operating Temperature +150°C
Height 9.8mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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