VISHAYIRFIZ14GPBFTransistor: N-MOSFET
The Vishay Semiconductor third generation power mosfets provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. Isolated package High voltage isolation is 2.5 kVRMS Sink to lead creepage distance is 4.8 mm 175 °c operating temperature Dynamic dv/dt rating Low thermal resistance
The Vishay Semiconductor third generation power mosfets provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
Isolated package
High voltage isolation is 2.5 kVRMS
Sink to lead creepage distance is 4.8 mm
175 °c operating temperature
Dynamic dv/dt rating
Low thermal resistance