VISHAYIRFR9220TRPBFTransistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 3.6AMaximum Power Dissipation 42W

Mã nhà sản xuất

IRFR9220TRPBF

Thương hiệu

VISHAY

Mã kho

177-7563

Liên hệ

📩 Liên hệ để có giá tốt: [email protected]

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor The Vishay third generation power MOSFETs utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Advanced process technology Fast switching Fully avalanche rated MOSFET Transistors, Vishay Semiconductor

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

The Vishay third generation power MOSFETs utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced process technology

Fast switching

Fully avalanche rated

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer	Vishay
Manufacturer Part No.	IRFR9220TRPBF
Channel Type	P
Maximum Continuous Drain Current	3.6A
Maximum Drain Source Voltage	200V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.5Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	42W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	20 nC @ 10 V
Length	6.73mm
Number of Elements per Chip	1
Width	6.22mm
Maximum Operating Temperature	+150°C
Transistor Material	Si
Minimum Operating Temperature	-55°C
Height	2.38mm

THÔNG SỐ KỸ THUẬT

Manufacturer

Vishay

Manufacturer Part No.

IRFR9220TRPBF

Channel Type

Maximum Continuous Drain Current

3.6A

Maximum Drain Source Voltage

200V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

1.5Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

Maximum Power Dissipation

42W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V

Length

6.73mm

Number of Elements per Chip

Width

6.22mm

Maximum Operating Temperature

+150°C

Transistor Material

Minimum Operating Temperature

-55°C

Height

2.38mm

VISHAYIRFR9220TRPBFTransistor: P-MOSFET

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

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