VISHAYSI1034CX-T1-GE3Transistor: N-MOSFET x2
Vishay MOSFET The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. Features and Benefits Gate source ESD protected: 1000V Halogen free Lead (Pb) free Operating temperature ranges between -55°C and 150°C TrenchFET power MOSFET Applications Battery powered devices Drivers: relays, solenoids, lamps, hammers, displays, memories Load/power switching for portable devices Power supply converter circuits Certifications ANSI/ESD S20.20:2014 BS EN 61340-5-1:2007 Rg tested
Vishay MOSFET
The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
- Gate source ESD protected: 1000V
- Halogen free
- Lead (Pb) free
- Operating temperature ranges between -55°C and 150°C
- TrenchFET power MOSFET
Applications
- Battery powered devices
- Drivers: relays, solenoids, lamps, hammers, displays, memories
- Load/power switching for portable devices
- Power supply converter circuits
Certifications
- ANSI/ESD S20.20:2014
- BS EN 61340-5-1:2007
- Rg tested