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VISHAYSI1077X-T1-GE3Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 760mAMaximum Power Dissipation 236 mW
Mã nhà sản xuất
SI1077X-T1-GE3
Thương hiệu
Mã kho
812-3050
Liên hệ
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P-Channel MOSFET, 30V to 80V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI1077X-T1-GE3
Channel Type P
Maximum Continuous Drain Current 760mA
Maximum Drain Source Voltage 30V
Package Type SC-89-6
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 244mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.7V
Maximum Power Dissipation 236 mW
Transistor Configuration Single
Maximum Gate Source Voltage -12 V, +12 V
Transistor Material Si
Maximum Operating Temperature +150°C
Length 1.7mm
Typical Gate Charge @ Vgs 4.43 nC @ 4.5 V
Width 1.2mm
Number of Elements per Chip 1
Minimum Operating Temperature -55°C
Height 0.6mm

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