Skip to content

VISHAYSI1302DL-T1-E3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 600mAMaximum Power Dissipation 280 mW
Mã nhà sản xuất
SI1302DL-T1-E3
Thương hiệu
Mã kho
169-6089
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI1302DL-T1-E3
Channel Type N
Maximum Continuous Drain Current 600mA
Maximum Drain Source Voltage 30V
Package Type SOT-323
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 480mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 280 mW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Width 1.35mm
Typical Gate Charge @ Vgs 0.86 nC @ 10 V
Length 2.2mm
Transistor Material Si
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Minimum Operating Temperature -55°C
Height 1mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

Compare products

Select 2 or 3 items to compare

Select first item to compare

Select second item to compare

Select third item to compare

Compare