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SI1480BDH-T1-GE3 4205150

VISHAYSI1480BDH-T1-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 1.9AKiểu lắp Surface Mount
Mã nhà sản xuất
SI1480BDH-T1-GE3
Thương hiệu
VISHAY
Mã kho
279-9891
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon. TrenchFET power MOSFET 100 percent Rg and UIS tested Fully lead (Pb)-free device

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI1480BDH-T1-GE3
Channel Type N
Maximum Continuous Drain Current 1.9A
Maximum Drain Source Voltage 100V
Package Type SOT-363
Mounting Type Surface Mount
Pin Count 6
Channel Mode Enhancement
Transistor Material Silicon
Number of Elements per Chip 1

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