VISHAYSI2301CDS-T1-E3Transistor: P-MOSFET
Vishay MOSFET The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 8V. It has drain-source resistance of 112mohm at a gate-source voltage of 4.5V. It has continuous drain current of 3.1A and maximum power dissipation of 1.6W. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. Features and Benefits Halogen free Lead (Pb) free Operating temperature ranges between -55°C and 150°C TrenchFET power MOSFET Certifications ANSI/ESD S20.20:2014 BS EN 61340-5-1:2007 IEC 61249-2-21
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 8V. It has drain-source resistance of 112mohm at a gate-source voltage of 4.5V. It has continuous drain current of 3.1A and maximum power dissipation of 1.6W. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
- Halogen free
- Lead (Pb) free
- Operating temperature ranges between -55°C and 150°C
- TrenchFET power MOSFET
Certifications
- ANSI/ESD S20.20:2014
- BS EN 61340-5-1:2007
- IEC 61249-2-21