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VISHAYSI2303CDS-T1-GE3Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 1.9AMaximum Power Dissipation 1W
Mã nhà sản xuất
SI2303CDS-T1-GE3
Thương hiệu
Mã kho
710-3241
Liên hệ
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P-Channel MOSFET, 30V to 80V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI2303CDS-T1-GE3
Channel Type P
Maximum Continuous Drain Current 1.9A
Maximum Drain Source Voltage 30V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 190mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 2 nC @ 4.5 V, 4 nC @ 10 V
Number of Elements per Chip 1
Length 3.04mm
Transistor Material Si
Width 1.4mm
Minimum Operating Temperature -55°C
Height 1.02mm

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