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VISHAYSI2325DS-T1-E3Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 530mAMaximum Power Dissipation 750 mW
Mã nhà sản xuất
SI2325DS-T1-E3
Thương hiệu
Mã kho
710-3263
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI2325DS-T1-E3
Channel Type P
Maximum Continuous Drain Current 530mA
Maximum Drain Source Voltage 150V
Package Type SOT-23 (TO-236)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 1.2Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 750 mW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Transistor Material Si
Width 1.4mm
Typical Gate Charge @ Vgs 7.7 nC @ 10 V
Length 3.04mm
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Minimum Operating Temperature -55°C
Height 1.02mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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