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VISHAYSI2374DS-T1-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 5.9AMaximum Gate Threshold Voltage 1V
Mã nhà sản xuất
SI2374DS-T1-GE3
Thương hiệu
Mã kho
146-4438
Liên hệ
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TrenchFET® power MOSFET Material categorization: APPLICATIONS Load switch Power management

TrenchFET® power MOSFET

Material categorization:

APPLICATIONS

Load switch

Power management

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI2374DS-T1-GE3
Channel Type N
Maximum Continuous Drain Current 5.9A
Maximum Drain Source Voltage 20V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 41 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 1.7W
Transistor Configuration Single
Maximum Gate Source Voltage ±8V
Number of Elements per Chip 1
Width 1.4mm
Length 3.04mm
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 13.4 nC @ 10 V
Minimum Operating Temperature -55°C
Height 1.02mm

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