Skip to content

VISHAYSI2387DS-T1-GE3Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 3AMaximum Gate Threshold Voltage 2.5V
Mã nhà sản xuất
SI2387DS-T1-GE3
Thương hiệu
Mã kho
228-2814
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

The Vishay TrenchFET Gen IV P-Channel power MOSFET is use for load switch, circuit protection and motor drive control. 100 % Rg and UIS tested

The Vishay TrenchFET Gen IV P-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

100 % Rg and UIS tested

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. Si2387DS-T1-GE3
Channel Type P
Maximum Continuous Drain Current 3A
Maximum Drain Source Voltage 80V
Package Type SOT-23
Series TrenchFET
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 11Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Number of Elements per Chip 2
Transistor Material Si

Giá: Liên hệ – gửi mã và số lượng về CV@chanhvinh.com để nhận báo giá nhanh.

Compare products

Select 2 or 3 items to compare

Select first item to compare

Select second item to compare

Select third item to compare

Compare