VISHAYSI2399DS-T1-GE3Transistor: P-MOSFET
Vishay MOSFET The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 12V. It has drain-source resistance of 34mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2.5W and continuous drain current of 6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. Features and Benefits Halogen free Lead (Pb) free Operating temperature ranges between -55°C and 150°C TrenchFET power MOSFET Applications DC/DC converters Load switch PA switch Certifications ANSI/ESD S20.20:2014 BS EN 61340-5-1:2007 IEC 61249-2-21 Rg tested
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 12V. It has drain-source resistance of 34mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2.5W and continuous drain current of 6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
- Halogen free
- Lead (Pb) free
- Operating temperature ranges between -55°C and 150°C
- TrenchFET power MOSFET
Applications
- DC/DC converters
- Load switch
- PA switch
Certifications
- ANSI/ESD S20.20:2014
- BS EN 61340-5-1:2007
- IEC 61249-2-21
- Rg tested