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VISHAYSI3129DV-T1-GE3Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 5.4AMaximum Gate Threshold Voltage 2.5V
Mã nhà sản xuất
SI3129DV-T1-GE3
Thương hiệu
Mã kho
228-2817
Liên hệ
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The Vishay TrenchFET P-Channel power MOSFET is use for Power management of portable and consumer load switch and DC/DC converters. 100 % Rg and UIS tested

The Vishay TrenchFET P-Channel power MOSFET is use for Power management of portable and consumer load switch and DC/DC converters.

100 % Rg and UIS tested

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. Si3129DV-T1-GE3
Channel Type P
Maximum Continuous Drain Current 5.4A
Maximum Drain Source Voltage 80V
Package Type TSOP-6
Series TrenchFET
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 0.0827Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Number of Elements per Chip 2
Transistor Material Si

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