VISHAYSI3421DV-T1-GE3Transistor: P-MOSFET
Vishay MOSFET The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 19.2mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 8A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. Features and Benefits Halogen free Lead (Pb) free Operating temperature ranges between -55°C and 150°C TrenchFET power MOSFET Applications Adaptor switch DC/DC converter For mobile computing/consumer Load switches Certifications ANSI/ESD S20.20:2014 BS EN 61340-5-1:2007 IEC 61249-2-21 Rg tested UIS tested
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 19.2mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 8A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
- Halogen free
- Lead (Pb) free
- Operating temperature ranges between -55°C and 150°C
- TrenchFET power MOSFET
Applications
- Adaptor switch
- DC/DC converter
- For mobile computing/consumer
- Load switches
Certifications
- ANSI/ESD S20.20:2014
- BS EN 61340-5-1:2007
- IEC 61249-2-21
- Rg tested
- UIS tested