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VISHAYSI3433CDV-T1-GE3Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 6AMaximum Power Dissipation 3.3W
Mã nhà sản xuất
SI3433CDV-T1-GE3
Thương hiệu
Mã kho
812-3142
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI3433CDV-T1-GE3
Channel Type P
Maximum Continuous Drain Current 6A
Maximum Drain Source Voltage 20V
Package Type TSOP-6
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 60mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 3.3W
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, +8 V
Maximum Operating Temperature +150°C
Width 1.7mm
Transistor Material Si
Length 3.1mm
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 30 nC @ 8 V
Height 1mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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