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VISHAYSI4056ADY-T1-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 8.3AMaximum Gate Threshold Voltage 2.5V
Mã nhà sản xuất
SI4056ADY-T1-GE3
Thương hiệu
Mã kho
228-2819
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

The Vishay TrenchFET Gen IV N-Channel power MOSFET is use for load switch, circuit protection and motor drive control. Very low RDS x Qg figure-of-merit (FOM) Tuned for the lowest RDS x Qoss FOM Logic level gate drive

The Vishay TrenchFET Gen IV N-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

Logic level gate drive

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. Si4056ADY-T1-GE3
Channel Type N
Maximum Continuous Drain Current 8.3A
Maximum Drain Source Voltage 100V
Package Type SO-8
Series TrenchFET
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 0.0292Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Transistor Material Si
Number of Elements per Chip 2

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