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VISHAYSI4435DDY-T1-GE3Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 8.1AMaximum Power Dissipation 2.5W
Mã nhà sản xuất
SI4435DDY-T1-GE3
Thương hiệu
Mã kho
710-3339
Liên hệ
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P-Channel MOSFET, 30V to 80V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI4435DDY-T1-GE3
Channel Type P
Maximum Continuous Drain Current 8.1A
Maximum Drain Source Voltage 30V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 24mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 2.5W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Length 5mm
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 15 nC @ 4.5 V, 32 nC @ 10 V
Transistor Material Si
Width 4mm
Minimum Operating Temperature -55°C
Height 1.5mm

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