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VISHAYSI8818EDB-T2-E1SI8818EDB N-Channel MOSFET, 2.2 A, 30 V, 4-Pin PowerPAK SI8818EDB-T2-E1

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 2.2AKiểu lắp Surface Mount
Mã nhà sản xuất
SI8818EDB-T2-E1
Thương hiệu
Quy cách đóng gói
Cuộn 3000 cái
Mã kho
653090
Liên hệ
📩 Liên hệ để có giá tốt: [email protected] 📄 Datasheet (PDF)

The Vishay N-channel MOSFET designed for ultra-compact, high-efficiency switching in space-constrained systems. It supports up to 30 V drain-source voltage. Packaged in MICRO FOOT 0.8 mm x 0.8 mm, it utilizes TrenchFET technology to deliver low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI8818EDB-T2-E1
Channel Type N
Maximum Continuous Drain Current 2.2A
Maximum Drain Source Voltage 30V
Package Type PowerPAK
Series SI8818EDB
Mounting Type Surface Mount
Pin Count 4
Channel Mode Enhancement
Number of Elements per Chip 1
Transistor Material Si

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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📄 Datasheet VISHAY SI8818EDB-T2-E1 (PDF)