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VISHAYSIHA17N80AE-GE3N-Channel MOSFET, 7 A, 800 V, 3-Pin Thin-Lead TO-220 FULLPAK Vishay SIHA17N80AE-GE3

Channel Type NMaximum Continuous Drain Current 7AMaximum Gate Threshold Voltage 2 → 4 VKiểu lắp Through Hole
Mã nhà sản xuất
SIHA17N80AE-GE3
Thương hiệu
Quy cách đóng gói
In a Tube of 50
Mã kho
2104960
Liên hệ
📩 Liên hệ để có giá tốt: [email protected] 📄 Datasheet (PDF)

The Vishay E Series Power MOSFET has Thin-Lead TO-220 FULLPAK package type with 7 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHA17N80AE-GE3
Channel Type N
Maximum Continuous Drain Current 7A
Maximum Drain Source Voltage 800V
Package Type TO-220 FP
Series E
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 0.25Ω
Maximum Gate Threshold Voltage 2 → 4 V
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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📄 Datasheet VISHAY SIHA17N80AE-GE3 (PDF)