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VISHAYSIHB080N60E-GE3Power MOSFET N Channel 600 V 35 A 0.08 ohm TO-263 (D2PAK) Surface Mount

Channel Type N ChannelContinuous Drain Current Id 35ANo. of Pins 3PinsPower Dissipation 227W
Mã nhà sản xuất
SIHB080N60E-GE3
Thương hiệu
Quy cách đóng gói
1 cái
Mã kho
4077834
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com 📄 Datasheet (PDF)

Vishay SIHB080N60E-GE3. Power MOSFET N Channel 600 V 35 A 0.08 ohm TO-263 (D2PAK) Surface Mount

Features:

  • Power MOSFET
  • N Channel
  • 600 V
  • 35 A
  • 0.08 ohm
  • TO-263 (D2PAK)
  • Surface Mount
THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHB080N60E-GE3
Channel Type N Channel
Drain Source Voltage Vds 600V
Continuous Drain Current Id 35A
Drain Source On State Resistance 0.08ohm
Transistor Case Style TO-263 (D2PAK)
Transistor Mounting Surface Mount
Rds(on) Test Voltage 10V
Gate Source Threshold Voltage Max 5V
Power Dissipation 227W
No. of Pins 3Pins

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📄 Datasheet VISHAY SIHB080N60E-GE3 (PDF)