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VISHAYSIHB24N80AE-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 21AMaximum Gate Threshold Voltage 4V
Mã nhà sản xuất
SIHB24N80AE-GE3
Thương hiệu
Mã kho
228-2847
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The Vishay E Series Power MOSFET reduced switching and conduction losses. Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er))

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHB24N80AE-GE3
Channel Type N
Maximum Continuous Drain Current 21A
Maximum Drain Source Voltage 800V
Series E Series
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 0.184Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Number of Elements per Chip 2
Transistor Material Si

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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