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SIHB28N60EF-GE3 903-4504

VISHAYSIHB28N60EF-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 28A
Mã nhà sản xuất
SIHB28N60EF-GE3
Thương hiệu
VISHAY
Mã kho
177-7628
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg) MOSFET Transistors, Vishay Semiconductor

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHB28N60EF-GE3
Channel Type N
Maximum Continuous Drain Current 28A
Maximum Drain Source Voltage 600V
Series EF Series
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 123mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 250W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Width 9.65mm
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 80 nC @ 10 V
Length 10.67mm
Transistor Material Si
Height 4.83mm
Forward Diode Voltage 1.2V
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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