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VISHAYSIHB30N60E-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 29AMaximum Power Dissipation 250W
Mã nhà sản xuất
SIHB30N60E-GE3
Thương hiệu
Mã kho
768-9310
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses MOSFET Transistors, Vishay Semiconductor

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features

Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHB30N60E-GE3
Channel Type N
Maximum Continuous Drain Current 29A
Maximum Drain Source Voltage 600V
Package Type D2PAK (TO-263)
Series E Series
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 125mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 250W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 85 nC @ 10 V
Transistor Material Si
Width 9.65mm
Length 10.67mm
Number of Elements per Chip 1
Height 4.83mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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